Taipei, May 25 (CNA) American dynamic random access memory (DRAM) maker Micron Technology is set to install the industry's most cutting-edge technology -- extreme ultraviolet (EUV) lithography equipment -- in its facility in Taichung this year, the company said Wednesday.
In early preparation for the volume production of 1-gamma nm (nanometer) node DRAM, "we plan to introduce EUV tools to our Taichung fab later this year," Sanjay Mehrotra, President and CEO of Micron Technology, said via video at the 2022 COMPUTEX Forum, which is being held in Taipei from May 24-27.
Gamma refers to the dimension of half the distance between cells in a DRAM chip.
Micron is also looking forward to beginning mass production of its next-generation DRAM products manufactured on the 1-beta nm node process in Taiwan next year, Mehrotra said.
"These two installations are another milestone in our continued growth and commitment to Taiwan," he said in his speech about the company's operations in Taiwan.
Micron last year unveiled its 1-alpha nm node DRAM, which the company said has a 40 percent improvement in memory density over its previous 1z nm node DRAM.
Micron's Taiwan fabs have begun volume production of 1-alpha nm node DRAM, starting with DDR4 memory for computer customers and crucial consumer PC DRAM products, according to the company's press release in January 2021.
The largest foreign employer and foreign direct investor in Taiwan with more than 10,000 employees in its fabs in Taichung and Taoyuan, Micron will continue to expand its recruitment of highly skilled personnel in the years ahead, it said.
According to a report in DIGITIMES Asia Wednesday, Micron has placed orders for EUV equipment and plans to transition to EUV technology to manufacture its DRAM using its 1-gamma nm node starting in 2024.